J. Phys. Chem. C, 128, 13493−13499 (2024)
In-Plane Optical Anisotropy in a MoSe2/Au (110) Moiré Superstructure
Yufeng Huang1, Mengjiao Li2, Hongchao Wang3, Peichao Wang3, Wanfu Shen1, Chunguang Hu1, Yanning Li1, Lidong Sun4, Zhixin Hu2 and Hong-Ying Gao3
1 State Key Laboratory of Precision Measurement Technology and Instruments, Nanchang Institute for Microtechnology of Tianjin University, Tianjin University, Tianjin 300072, China.
2 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics & Center for Joint Quantum Studies, Tianjin University, Tianjin 300350, China.
3 Haihe Laboratory of Sustainable Chemical Transformations, Tianjin Key Laboratory of Applied Catalysis Science and Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300350, China.
4 Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz, Austria.
* yanningli@tju.edu.cn, lidong.sun@jku.at, zhixin.hu@tju.edu.cn, gaohongying@tju.edu.cn
Abstract
In this work, we report the observation of the in-plane optical anisotropy in MoSe2/Au (110) moiré superstructure using reflectance difference spectroscopy, which is formed during the molecular beam epitaxy growth of monolayer MoSe2 on the Au (110) substrate. The MoSe2 moiré superstructure is examined with low-temperature scanning tunneling microscopy and further confirmed by the manifest of the break of C3v symmetry of free-standing MoSe2 with low energy electron diffraction. Furthermore, the density functional theory calculations, which allow us to determine the interfacial structure, corresponding electronic structure, and optical response of the strained MoSe2 monolayer on Au (110), reveal that the experimentally observed optical anisotropy can be attributed to the anisotropic deformation of the MoSe2 lattice by interacting with the underlying Au (110). This work provides an effective strategy for tuning the electronic and optical properties of two-dimensional materials by interfacial interactions through their epitaxial growth on selected substrate surfaces.
