Phys. Rev. B 112, 165204 (2025)

Evidence of anisotropic three-dimensional weak localization in TiSe2 nanoflakes

Xiaocui Wang^1,2, Yang Yang^3,4, Yongkai Li^1,2, Guangtong Liu^5,6,7, Junxi Duan^1,2, Zhiwei Wang^1,2,*, Li Lu^5,6,7 and  Fan Yang^3,4,†

1 Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.

2 Micronano Center, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.

3 Center for Joint Quantum Studies and Department of Physics, School of Science, Tianjin University, Tianjin 300350, China.

4 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300350, China.

5 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

6 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.

7 Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.

* zhiweiwang@bit.edu.cn, fanyangphys@tju.edu.cn

Abstract

TiSe2 is a typical transition-metal dichalcogenide known for its charge-density-wave order. In this study, we report the observation of an unusual anisotropic negative magnetoresistance in exfoliated TiSe2 nanoflakes at low temperatures. Unlike the negative magnetoresistance reported in most other transition-metal dichalcogenides, our results cannot be explained by either the conventional two-dimensional weak localization effect or the Kondo effect. A comprehensive analysis of the data suggests that the observed anisotropic negative magnetoresistance in TiSe2 flakes is most likely caused by the three-dimensional weak localization effect.