ACS Appl. Mater. Interfaces 10, 40614−40622 (2018)

Wafer-Scale Fabrication of Two-Dimensional PtS₂/PtSe₂ Heterojunctions for Efficient and Broad band Photodetection

Jian Yuan^†,¶,#, Tian Sun^†,#, Zhixin Hu^‡,#, Wenzhi Yu^†, Weiliang Ma^†, Kai Zhang^§, Baoquan Sun^†, Shu Ping Lau^∥, Qiaoliang Bao^⊥, Shenghuang Lin^*,∥, and Shaojuan Li^*,#

†  Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, People’s Republic of China

¶  School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, Anhui, People’s Republic of China

‡  Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, Tianjin 300350, People’s Republic of China

§  i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, People’s Republic of China

∥  Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, People’s Republic of China

⊥ Department of Materials Science and Engineering, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia

#  Equal contribution

*  Corresponding Authors:
Email: Lin, Shenghuang ( shenghuanglinchina@gmail.com )
Email: Li, Shaojuan,( sjli@suda.edu.cn )

Abstract

The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS₂/PtSe₂ heterojunctions covering a large area on the SiO₂/Si substrate with a maximum size of 2″ in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS₂/PtSe₂ heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405−2200 nm). The PtS₂/PtSe₂ heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.