报告题目：Towards understanding charge noise in Si/SiGe quantum dots

报告人：    叶飞扬 博士 （美国罗切斯特大学）

报告时间：2025 年 10 月 22 日（周三） 14: 00-15 : 00

报告地点：北洋园校区 49 教 410 室

报告摘要：

 Due to their long coherence times, small footprints, scalability, and compatibility with semiconductor technology, electron spins in silicon quantum dots are a promising platform for building quantum computers. Although single-qubit and two-qubit gates with fidelity above the fault-tolerant threshold have been achieved with silicon spin qubits, charge noise, random electrical fluctuations in the semiconductor environment, is a major obstacle to further improvements. Despite the importance of charge noise, key questions about the microscopic origin of charge noise in Si quantum dots remain elusive. In this talk, I will demonstrate several charge noise experiments performed in Si/SiGe gate-defined quantum dots, including detailed characterization of individual charged two-level fluctuators (TLFs) and stabilization of a TLF in a Si/SiGe quantum dot by leveraging sensitive voltage dependence of the TLF switching times. Altogether, the results advance our understanding of charge noise in Si/SiGe quantum dots on what causes charge noise, what affects individual charge noise sources, and how to mitigate charge noise.

References

[1] F. Ye et al., Phys. Rev. B 110, 235305 (2024);

[2] F. Ye et al., Phys. Rev. Applied 23, 044063 (2025).

报告人简介：

    叶飞扬，2020年于天津大学获得学士学位，2025年于美国罗切斯特大学获得物理学博士学位，主要研究方向为基于固体平台的量子计算。